1996. 9. 14 1/2 semiconductor technical data KTA1273 epitaxial planar pnp transistor revision no : 1 high current application. features complementary to ktc3205. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification 0:100 200, y:160 320 characteristic symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -2 a emitter current i e 2 a collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-30v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -30 - - v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5 - - v dc current gain h fe (note) v ce =-2v, i c =-500ma 100 - 320 collector-emitter saturation voltage v ce(sat) i c =-1.5a, i b =-0.03a - - -2.0 v base-emitter voltage v be v ce =-2v, i c =-500ma - - -1.0 v transition frequency f t v ce =-2v, i c =-500ma - 120 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 48 - pf
1996. 9. 14 2/2 KTA1273 revision no : 1 collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta dc current gain h fe -30 -10 -3 -1 collector current i (ma) c h - i v - i c collector current i (ma) -1 -3 -10 -30 -0.01 ce(sat) collector-emitter saturation collector-emitter voltage v (v) collector current i (ma) 0 0 c ce i - v c ce collector emitter voltage v (v) collector current i (a) -0.03 c -0.3 -0.5 ce -1 -3 area of safe operation base-emitter voltage v (v) collector current i (ma) 0 0 c be i - v cbe -2 -4 -6 -8 -10 -12 -14 -16 -200 -400 -600 -800 -1000 -1200 -1400 -1600 common emitter ta=25 c -10 -8 -6 -4 -3 -2 i =-1ma 0 b ce(sat) c voltage v (v) -100 -300 -1k -3k -0.03 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 common emitter i /i =50 cb ta=100 c ta=25 c ta=-25 c p (w) 20 40 60 80 100 120 140 160 180 0.2 0.4 0.6 0.8 1.0 1.2 fe c -100 -300 -1k -3k 10 30 50 100 300 500 1k ta=100 c ta=-25 c ta=25 c -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.6 -1.8 -200 -400 -600 -800 -1000 -1200 -1400 -1600 common emitter v =-2v ce ta=100 c t a=25 c t a=-2 5 c -5 -10 -30 -50 -0.05 -0.1 -0.3 -0.5 -1 -3 -5 single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * i max(pulsed) i max(continuous) c c * 1ms 10m s 100ms 1s dc ope rat ion t a= 25 c * * * * v =-2v ce v max. ceo
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